THERMAL CONDUCTIVITY OF NIOBIUM SINGLE CRYSTALS IN A MAGNETIC FIELDGLADUN C; MADGE H; VINZELBERG H et al.1980; PHYS. STATUS SOLIDI (A), APPL. RES.; ISSN 0031-8965; DDR; DA. 1980; VOL. 62; NO 2; PP. 503-508; ABS. GER; BIBL. 23 REF.Article

THERMAL CONDUCTIVITY OF HIGH-PURITY MOLYBDENUMGLADUN A; GLADUN C; VINZELBERG H et al.1980; PHYS. STATUS SOLIDI (A), APPL. RES.; ISSN 0031-8965; DDR; DA. 1980; VOL. 58; NO 2; PP. 409-413; ABS. GER; BIBL. 17 REF.Article

INVESTIGATION OF THE HEAT CONDUCTIVITY OF NIOBIUM IN THE TEMPERATURE RANGE 0,05-23 K.GLADUN A; GLADUN C; KNORN M et al.1977; J. LOW. TEMPER. PHYS.; U.S.A.; DA. 1977; VOL. 27; NO 5-6; PP. 873-886; BIBL. 28 REF.Article

THERMAL CONDUCTIVITY ANISOTROPY OF TIN MONOCRYSTALS IN THE TEMPERATURE RANGE 0.1 TO 7 KBARTKOWSKI K; RAFALOWICZ J; GLADUN A et al.1980; PHYS. STATUS SOLIDI, SECT. A, APPL. RES.; DDR; DA. 1980-11-16; VOL. 62; NO 1; PP. 207-211; BIBL. 13 REF.Article

THERMAL CONDUCTIVITY ANISOTROPY OF TIN MONOCRYSTALS IN THE TEMPERATURE RANGE 0.1 TO 7 KBARTKOWSKI K; GLADUN A; GLADUN C et al.1980; PHYS. STATUS SOLIDI (A), APPL. RES.; ISSN 0031-8965; DDR; DA. 1980; VOL. 62; NO 1; PP. 207-211; ABS. GER; BIBL. 13 REF.Article

THERMAL CONDUCTIVITY OF RUO₂GLADUN A; GLADUN C; HOFMANN A et al.1980; PHYS. STATUS SOLIDI (A), APPL. RES.; ISSN 0031-8965; DDR; DA. 1980; VOL. 58; NO 1; PP. 149-153; ABS. GER; BIBL. 9 REF.Article

Nanodisperse CrSi(O, N) thin films : conductivity, thermopower and aplicationHEINRICH, A; SCHUMANN, J; VINZELBERG, H et al.Thin solid films. 1993, Vol 223, Num 2, pp 311-319, issn 0040-6090Article

Electrical properties of heterogeneous CrSi(O,N) thin filmsHEINRICH, A; GLADUN, C; SCHREIBER, H et al.Vacuum. 1990, Vol 41, Num 4-6, pp 1408-1410, issn 0042-207X, 3 p.Conference Paper

Electrical conductivity and metal-insulator transition in the amorphous system Cr_xGe_1-xELEFANT, D; GLADUN, C; HEINRICH, A et al.Philosophical magazine. B. Physics of condensed matter. Structural, electronic, optical and magnetic properties. 1991, Vol 64, Num 1, pp 49-55, issn 0958-6644, 7 p.Article

Low-temperature conductivity and magnetoconductivity of neutron-transmutation-doped barely metallic GaAs in the vicinity of the metal-insulator transitionFRIEDLAND, K. J; IONOV, A. N; RENTZSCH, R et al.Journal of physics. Condensed matter (Print). 1990, Vol 2, Num 16, pp 3759-3766, issn 0953-8984Article

Activated conduction in amorphous Cr-SiO_x thin filmsVINZELBERG, H; HEINRICH, A; GLADUN, C et al.Philosophical magazine. B. Physics of condensed matter. Structural, electronic, optical and magnetic properties. 1992, Vol 65, Num 4, pp 651-656, issn 0958-6644Conference Paper

The metal-semiconductor transition in amorphous Si_1-xCr_x films. II: Range of validity of the scaling behaviour of the conductivity σ(T,x)=σ(T/T_o(x)), in the semiconducting region and determination of the minimum metallic conductivity from σ(T,x) in the metallic regionMÖBIUS, A; VINZELBERG, H; GLADUN, C et al.Journal of physics. C. Solid state physics. 1985, Vol 18, Num 17, pp 3337-3355, issn 0022-3719Article

Polycrystalline iridium silicide films. Phase formation, electrical and optical propertiesSCHUMANN, J; ELEFANT, D; GLADUN, C et al.Physica status solidi. A. Applied research. 1994, Vol 145, Num 2, pp 429-439, issn 0031-8965Article

Conductivity and magnetoconductivity of amorphous Cr_xGe_1-x near the metal-insulator transitionHEINRICH, A; VINZELBERG, H; ELEFANT, D et al.Journal of non-crystalline solids. 1993, Vol 164-66, pp 513-516, issn 0022-3093, 1Conference Paper

Variable-range hopping in neutron-transmutation-doped gallium arsenideRENTZSCH, R; FRIEDLAND, K. J; IONOV, A. N et al.Physica status solidi. B. Basic research. 1986, Vol 137, Num 2, pp 691-700, issn 0370-1972Article

Nanodispersed Cr_xSi_1-x thin films : transport properties and thermoelectric applicationSCHUMANN, J; GLADUN, C; MÖNCH, J.-I et al.Thin solid films. 1994, Vol 246, Num 1-2, pp 24-29, issn 0040-6090Conference Paper